1 preferred device
reverse blocking thyristors designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever halfwave silicon gatecontrolled devices are needed. ? blocking voltage to 800 volts ? onstate current rating of 12 amperes rms at 80 c ? high surge current capability e 100 amperes ? rugged, economical to220ab package ? glass passivated junctions for reliability and uniformity ? minimum and maximum values of igt, vgt an ih specified for ease of design ? high immunity to dv/dt e 100 v/ m sec minimum at 125 c ? device marking: logo, device type, e.g., MCR12D, date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive offstate voltage (1) (t j = 40 to 125 c, sine wave, 50 to 60 hz, gate open) MCR12D mcr12m mcr12n v drm, v rrm 400 600 800 volts on-state rms current (180 conduction angles; t c = 80 c) i t(rms) 12 a peak non-repetitive surge current (1/2 cycle, sine wave 60 hz, t j = 125 c) i tsm 100 a circuit fusing consideration (t = 8.33 ms) i 2 t 41 a 2 sec forward peak gate power (pulse width 1.0 m s, t c = 80 c) p gm 5.0 watts forward average gate power (t = 8.3 ms, t c = 80 c) p g(av) 0.5 watts forward peak gate current (pulse width 1.0 m s, t c = 80 c) i gm 2.0 a operating junction temperature range t j 40 to +125 c storage temperature range t stg 40 to +150 c (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 12 amperes rms 400 thru 800 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information MCR12D to220ab 50 units/rail mcr12m to220ab mcr12n to220ab www.kersemi.com 50 units/rail 50 units/rail k g a to220ab case 221a style 3 1 2 3 4 pin assignment 1 2 3 anode gate cathode 4 anode
MCR12D, mcr12m, mcr12n www.kersemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junction to case e junction to ambient r q jc r q ja 2.2 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (v d = rated v drm and v rrm ; gate open) t j = 25 c t j = 125 c i drm , i rrm e e e e 0.01 2.0 ma on characteristics peak forward onstate voltage* (i tm = 24 a) v tm e e 2.2 volts gate trigger current (continuous dc) (v d = 12 v; r l = 100 w ) i gt 2.0 8.0 20 ma holding current (v d = 12 v, gate open, initiating current = 200 ma) i h 4.0 20 40 ma latch current (v d = 12 v, i g = 20 ma) i l 6.0 25 60 ma gate trigger voltage (continuous dc) (v d = 12 v; r l =100 w ) v gt 0.5 0.65 1.0 volts dynamic characteristics critical rate of rise of offstate voltage (v d = rated v drm , exponential waveform, gate open, t j = 125 c) dv/dt 100 250 e v/ m s repetitive critical rate of rise of onstate current ipk = 50 a, pw = 40 m sec, dig/dt = 1 a/ m sec, igt = 50 ma di/dt e e 50 a/ m s *indicates pulse test: pulse width 2.0 ms, duty cycle 2%.
MCR12D, mcr12m, mcr12n 3 + current + voltage v tm i drm at v drm i h symbol parameter v drm peak repetitive off state forward voltage i drm peak forward blocking current v rrm peak repetitive off state reverse voltage i rrm peak reverse blocking current v tm peak on state voltage i h holding current voltage current characteristic of scr anode + on state reverse blocking region (off state) reverse avalanche region anode forward blocking region i rrm at v rrm (off state) 90 180 figure 1. typical rms current derating figure 2. onstate power dissipation figure 3. typical onstate characteristics figure 4. typical gate trigger current versus junction temperature 8 0 i t(rms) , rms onstate current (amps) 125 120 i t(av) , average onstate current (amps) 38 0 8 4 2 0 3.0 0.5 v t , instantaneous onstate voltage (volts) 100 10 1 0.1 t j , junction temperature ( c) 10 40 20 2 0 2.5 t c , case temperature ( c) p i gate trigger current (ma) 115 105 123 12 6 10 20 1.0 2.0 20 50 80 125 , average power dissipation (watts) (av) , instantaneous onstate current (amps) t dc 180 90 60 dc 30 maximum @ t j = 25 c maximum @ t j = 125 c 5 1.5 45 110 4 100 90 95 67 12 14 67 12 91011 30 12 910 11 16 18 5356595 25 110 4 6 8 10 12 14 16 18 www.kersemi.com
MCR12D, mcr12m, mcr12n 4 figure 5. typical holding current versus junction temperature figure 6. typical gate trigger voltage versus junction temperature 25 20 40 t j , junction temperature ( c) 10 t j , junction temperature ( c) 25 65 40 0.2 20 5 , holding current (ma) i h 50 110 65 5 125 35 50 v gt , gate trigger voltage (volts) 80 1 1.0 10 35 95 100 10 95 80 125 0.3 0.4 0.5 0.6 0.7 0.8 0.9 110 figure 7. typical latching current versus junction temperature 65 125 40 t j , junction temperature ( c) i l , latching current (ma) 10 1 25 5 20 50 95 100 10 35 80 110 www.kersemi.com
MCR12D, mcr12m, mcr12n 5 package dimensions to220ab case 221a09 issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 1.15 z 0.080 2.04 q h z l v g n a k 123 4 d seating plane t c s t u r j style 3: pin 1. cathode 2. anode 3. gate 4. anode www.kersemi.com
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